Single Walled Carbon Nanotubes Array on Monocrystal Silicon, Height: 190 µm

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Description

Single Walled Carbon Nanotubes Array on Monocrystal Silicon

Height: 190 µm

Technical Properties:

SWCNT Purity 99 wt%
Carbon Nanotube >99.5%
SWCNT Outside Diameter 1-3 nm
SWCNT Inside Diameter 0.6-1.8 nm
SWCNT Array on Monocrystal Silicon Height 190 µm
SWCNT Array on Monocrystal Silicon Density <0.30 g/cm3
SWCNT Array on Monocrystal Silicon SSA  28 m2/g
SWCNT Array on Monocrystal Silicon Electrical Conductivity 1100 S/m

Applications:

Single Walled Carbon Nanotubes Array on Monocrystal Silicon show high electric conductivity. It has also high ability to efficiently dissipate
heat due to its large surface area. These unique  properties show high potential in microelectronics, sensors, and power applications.

Additional information

Quantity

1cm x 1cm

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