Description

Silicon (Si) Micron Powder

PURITY	99.99 %
PARTICLE SIZE	10 µm
CAS	7440-21-3
MELTING POINT	1410 °C
BOILING POINT	2355 °C
MOHS HARDNESS @ 20ºC	7
ELECTRIC CONDUCTANCE	0.1 Microhm-1
CRYSTAL STRUCTURE	Diamond
DENSITY	2.329 g/cm³
FORM	Powder
APPLICATIONS	Plasma Spray Semiconductors

Quantity	5 g, 25 g, 100 g, 500 g, 1000 g

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