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Monolayer Graphene on SiO2/Si Substrate, Size: 4″
€577.00 – €2,542.00
Description
Monolayer Graphene on SiO2/Si Substrate
Size: 4″, Grain Size: 6-10 μm
Technical Properties of Graphene Film: |
|
Transparency | > 95 % |
Coverage | > 93% |
Thickness (theoretical) | 0.340 nm |
Sheet Resistance | 500-530 Ohms/sq |
Grain Size | 6-10 μm |
Technical Properties of SiO2/Si Substrate: |
|
Size (inch) | 4” |
Dry Oxide Thickness | 300 nm |
Type | Phosphor doped / N type |
Orientation | <100> |
Resistivity | 0.001 – 0.01 |
Thickness | 525 +/- 20 μm |
Front surface | One Side Polished |
Applications:
Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.
SEM Image of Monolayer Graphene
Raman Image Of Monolayer Graphene
Method of Preparation Graphene on Si/SiO2 Substrate was prepared by the following steps: |
1) Single layer graphene grown on copper foil |
2) Deposit PMMA and curing process |
3) Remove Cu by etching process |
4) Wash PMMA/Graphene in DI water |
5) Redeposit PMMA/Graphene onto Si substrate and curing process |
6) Remove PMMA with aceton |
Additional information
Quantity | 1 Piece, 5 Pieces |
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